www.goodark.com page 1 of 4 rev.1.0 ssf 5510g preliminary absolute maximum ratings parameter max. units i d @t c =25? c continuous drain current,vgs@10v 56 i d @t c =100?c continuous drain current,vgs@10v 40 i dm pulsed drain current 224 a power dissipation 90 w p d @t c =25?c linear derating factor 0.9 w/? c v gs gate-to-source voltage 20 v dv/dt peak diode recovery voltage 5.0 v/ns e as single pulse avalanche energy 405 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range C55 to +150 ?c thermal resistance parameter min. typ. max. units r jc junction-to-case 1.4 r ja junction-to-ambient 62 ?c/w electrical characteristics @t j =25 ?c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 55 v v gs =0v,i d =250a r ds(on) static drain-to-source on-resistance 8 10 m v gs =10v,i d =34a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250a 2 v ds =55v,v gs =0v i dss drain-to-source leakage current 10 a v ds =44v, v gs =0v,t j =150?c ssf5510g top view id =56a bv=55v r ds (on) =8mohm typ. features ? advanced trench process technology ? ultra low rdson, typical 8mohm ? high avalanche energy, 100% test ? fully characterized avalanche voltage and current ? lead free product description the ssf5510g is a new generation of middle voltage and high current nCchannel enhancement mode trench power mosfet. this new technology increases the device reliability and electrical parameter repeatability. ss5510g is assembled in high reliability and qualified assembly house. applications ? power switching application
www.goodark.com page 2 of 4 rev.1.0 ssf 5510g preliminary gate-to-source forward leakage 100 v gs =20v i gss gate-to-source reverse leakage -100 na v gs =-20v q g total gate charge 72 q gs gate-to-source charge 18 q gd gate-to-drain("miller") charge 20 nc i d =34 a v dd =44v v gs =10v t d(on) turn-on delay time 14 t r rise time 110 t d(off) turn-off delay time 53 t f fall time 76 ns v dd =28 v i d =34a r g =6.8 v gs =10v c iss input capacitance 2580 c oss output capacitance 480 c rss reverse transfer capacitance 110 pf v gs =0v v ds =25v f=1.0mhz source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 52 i sm pulsed source current (body diode) 203 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.3 v t j =25?c,i s =34a,v gs =0v t rr reverse recovery time 60 ns q rr reverse recovery charge 156 nc t j =25?c,i f =34a di/dt=100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) gate charge test circuit eas test circuit notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, id = 52a, vdd = 30v pulse width300s, duty cycle1.5% ; rg = 25?? starting tj = 25c
www.goodark.com page 3 of 4 rev.1.0 ssf 5510g preliminary switch waveforms transient thermal impedance curve switch time test circuit
www.goodark.com page 4 of 4 rev.1.0 ssf 5510g preliminary dimensions in millimeters dimensions in inches symbol min max min max a 2.200 2.400 0.087 0.094 a1 1.050 1.350 0.042 0.054 b 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 d 6.350 6.650 0.250 0.262 d1 5.200 5.400 0.205 0.213 e 5.400 5.700 0.213 0.224 e 2.300 typ 0.091 typ e1 4.500 4.700 0.177 0.185 l 7.500 7.900 0.295 0.311
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